d a t a sh eet product speci?cation july 1986 discrete semiconductors blu11/sl uhf power transistor
july 1986 2 philips semiconductors product speci?cation uhf power transistor blu11/sl description n-p-n silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 mhz band. features multi-base structure and emitter-ballasting resistors for an optimum temperature profile. gold metallization ensures excellent reliability. the device can be applied at a p l of max. 1,5 w when it is mounted on a printed wiring board (see fig.6) without an external heatsink. the transistor has a 4-lead envelope with a ceramic cap (sot-122d). all leads are isolated from the mounting base. quick reference data r.f. performance in a common-emitter class-b circuit. note 1. device mounted on a printed wiring board (see fig.6). mode of operation t c v ce v f mhz p l w g p db h c % narrow band; c.w. t mb = 25 12,5 470 2,5 > 10 > 55 t a =25 (1) 12,5 470 1,5 > 12 > 55 pin configuration fig.1 simplified outline. sot122d. handbook, halfpage 2 3 1 4 msb055 pinning - sot122d. pin description 1 collector 2 emitter 3 base 4 emitter product safety this device incorporates beryllium oxide, the dust of which is toxic. the device is entirely safe provided that the beo disc is not damaged.
july 1986 3 philips semiconductors product speci?cation uhf power transistor blu11/sl ratings limiting values in accordance with the absolute maximum system (iec 134) thermal resistance dissipation = 4,5 w note 1. device mounted on a printed wiring board (see fig.6). collector-base voltage (open emitter) v cbo max. 36 v collector-emitter voltage (open base) v ceo max. 16 v emitter-base voltage (open collector) v ebo max. 3 v collector current d.c. or average i c ; i c(av) max. 0,4 a (peak value), f > 1 mhz i cm max. 1,2 a total power dissipation at t mb 90 c; f > 1 mhz p tot(rf) max. 6 w storage temperature t stg - 65 to + 150 c operating junction temperature t j max. 200 c from junction to ambient (1) at t a =25 c; f > 1 mhz (r.f. operation) r th j-a (rf) max. 50 k/w from junction to mounting base at t mb =25 c; f > 1 mhz (r.f. operation) r th j-mb (rf) max. 15 k/w fig.2 power/temperature derating curves. i continuous r.f. operation (f > 1 mhz) ii short-time r.f. operation during mismatch (f > 1 mhz) handbook, halfpage 0 ii i 40 80 p tot(rf) (w) t mb ( c) 160 10 0 8 120 6 4 2 mda306
july 1986 4 philips semiconductors product speci?cation uhf power transistor blu11/sl characteristics t j =25 c unless otherwise speci?ed collector-base breakdown voltage open emitter; i c = 5 ma v (br)cbo min. 36 v collector-emitter breakdown voltage open base; i c = 10 ma v (br)ceo min. 16 v emitter-base breakdown voltage open collector; i e = 0,5 ma v (br)ebo min. 3 v collector cut-off current v be = 0; v ce = 16 v i ces max. 2,5 ma second breakdown energy l = 25 mh; f = 50 hz; r be =10 w e sbr min. 0,55 mj d.c. current gain i c = 0,3 a; v ce = 10 v h fe min. 25 collector capacitance at f = 1 mhz i e =i e = 0; v cb = 12,5 v c c typ. 4 pf feedback capacitance at f = 1 mhz i c = 0; v ce = 12,5 v c re typ. 2,5 pf collector-mounting base capacitance c c-mb typ. 1,2 pf fig.3 t j =25 c; typical values. handbook, halfpage 0 v ce = 12.5 v 10 v 120 80 40 0 400 h fe i c (ma) 800 1200 mda307 fig.4 i e =i e = 0; f = 1 mhz; typical values. handbook, halfpage 020 10 0 2 4 6 8 4812 c c (pf) v cb (v) 16 mda308
july 1986 5 philips semiconductors product speci?cation uhf power transistor blu11/sl application information r.f. performance in common-emitter circuit; class-b; f = 470 mhz; circuit tuned at p l = 2,5 w. list of components: notes 1. american technical ceramics capacitor type b or capacitor of the same quality. 2. device mounted on a printed wiring board (see fig.6). mode of operation t c v ce v f mhz p l w g p db h c % narrow band; c.w. t mb = 25 12,5 470 2,5 > 10 > 55 t mb = 25 typ. 12 typ. 60 t a =25 (2) 12,5 470 1,5 > 12 > 55 c1 = c2 = 2-9 pf ?lm dielectric trimmer (cat. no. 2222 809 09002) c3 = 1,6 pf multilayer ceramic chip capacitor (1) c4 = 10 pf multilayer ceramic chip capacitor (1) c5 = 100 pf multilayer ceramic chip capacitor c6 = 3 100 nf multilayer ceramic chip capacitor (cat. no. 2222 809 47104) c7 = 2,2 m f (35 v) tantalum electrolytic capacitor c8 = 1,4 - 55 pf ?lm dielectric trimmer (cat. no. 2222 809 09001) c9 = 5,6 pf multilayer ceramic chip capacitor (1) l1 = 56 w stripline (25,5 mm 2 mm) l2 = l3 = 25 w stripline (11 mm 6 mm) l4 = 132 nh; 6 turns closely wound enamelled cu-wire (1 mm), int. dia. 6 mm, leads 2 5 mm l5 = ferroxcube h.f. choke, grade 3b (cat. no. 4312 020 36642) l6 = 16 nh; 1 turn enamelled cu-wire (1 mm), int. dia. 6 mm, leads 2 5 mm r1 = 10 w; 5% 0,4 w metal ?lm resistor r2 = 10 w; 5% 0,4 w metal ?lm resistor l1, l4 and l5 are striplines on a double cu-clad printed wiring board with ptfe ?bre-glass dielectric ( e r = 2,2) and a thickness 1 32 inch; thickness of copper-sheet 2 35 m m. handbook, full pagewidth mda309 t.u.t. c2 c3 r1 c4 c5 c6 c7 l5 r2 l1 c1 l3 l4 l2 l6 c9 c8 50 w 50 w +v cc fig.5 class-b test circuit at f = 470 mhz.
july 1986 6 philips semiconductors product speci?cation uhf power transistor blu11/sl fig.6 printed wiring board and component lay-out for 470 mhz class-b test circuit. handbook, full pagewidth mda310 70 108 copper straps rivets m2 m3 c1 c3 c2 r1 c4 l1 l2 l3 l4 c5 r2 l5 c6 c7 c9 c8 l6 + v cc the circuit and the components are situated on one side of the p.t.f.e. fibre-glass board; the other side is unetched copper serving as a groundplane. earth connections are made by using hollow rivets, fixing-screws and copper straps at the input and output and under the two emitters to provide a direct contact between the copper on the component side and the groundplane. dimensions in mm.
july 1986 7 philips semiconductors product speci?cation uhf power transistor blu11/sl fig.7 load power versus source power. v ce = 12,5 v; f = 470 mhz; t mb =25 c; class-b operation; test circuit tuned at p l = 2,5 w; typical values. handbook, halfpage 0 0.1 p l (w) p s (w) 0.2 0.3 4 3 1 0 2 mda311 fig.8 power gain and efficiency versus load power. v ce = 12,5 v; f = 470 mhz; t mb =25 c; class-b operation; test circuit tuned at p l = 2,5 w; typical values. handbook, halfpage 1 1.5 p l (w) 23 20 20 40 60 80 100 0 0 16 2.5 12 8 4 g p (db) h c (%) h c mda312 g p ruggedness the blu11/sl is capable of withstanding a full load mismatch (vswr = 50 through all phases) at p l = 2,5 w up to a supply voltage of 15,5 v at t mb =25 c. input and output impedances (series components) versus frequency: v ce = 12,5 v; p l = 2,5 w; f = 400 to 512 mhz; t mb =25 c; class-b operation; typical values. frequency (mhz) z i ( w )z o ( w ) 400 4,0 - j 4,1 13,1 + j 7,2 430 4,0 - j 3,3 13,3 + j 7,0 460 4,0 - j 2,6 13,6 + j 6,9 490 4,1 - j 1,9 13,8 + j 6,8 512 4,1 - j 1,5 13,8 + j 6,7
july 1986 8 philips semiconductors product speci?cation uhf power transistor blu11/sl package outline unit a d 2 references outline version european projection issue date iec jedec eiaj mm a 90 sot122d 97-04-18 h b h l d b 5.85 5.58 4.17 3.27 0.18 0.14 7.50 7.23 7.24 6.98 cq 1.58 1.27 h 27.56 25.78 9.91 9.14 l 0 5 10 mm scale q a d 2 d c 1 4 3 2 studless ceramic package; 4 leads sot122d a dimensions (millimetre dimensions are derived from the original inch dimensions)
july 1986 9 philips semiconductors product speci?cation uhf power transistor blu11/sl definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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